| PART |
Description |
Maker |
| WTN9435 |
Surface Mount P-Channel Enhancement Mode Power MOSF ET
|
Weitron Technology
|
| 2SK3018 |
SOT-23 Plastic-Encapsulate MOSF ETS
|
TY Semiconductor Co., Ltd
|
| APT33GF120B2RD APT33GF120LRD |
Fast IGBT & FRED 1200V 52A
The Fast IGBT is a new generation of high voltage power IGBTs.
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
The Fast IGBTis a new generation of high voltage power IGBTs.
|
Advanced Power Technology Ltd.
|
| STB15NM60N STI15NM60N STP15NM60N STF/I15NM60N STF1 |
N-channel 600V - 0.270ヘ - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET
N-channel 600V - 0.270Ω - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET
N-channel 600V - 0.270Ω - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh?/a> Power MOSFET
N-channel 600V - 0.270楼? - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh垄芒 Power MOSFET
|
STMicroelectronics
|
| APT15GT60BR |
The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
Thunderbolt IGBT 600V 31A
|
ADPOW[Advanced Power Technology]
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| MIC501305 MIC5013YM |
IC DRIVER MOSF HI/LO SIDE 8SOIC BUF OR INV BASED MOSFET DRIVER, PDSO8
Protected High- or Low-Side MOSFET Driver
|
Micrel Semiconductor, Inc.
|
| M5-128/120-5YI M5-128/120-5YC M5-128/160-5YI M5-19 |
Fifth Generation MACH Architecture 第五代马赫架
Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 7.5 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 5.5 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 7.5 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 12 ns, PBGA256
Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 15 ns, PBGA352
|
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
Air Cost Control
|
| APT20GF120BRD |
Fast IGBT & FRED 1200V 32A
The Fast IGBT is a new generation of high voltage power IGBTs.
The Fast IGBTis a new generation of high voltage power IGBTs.
|
Advanced Power Technology Ltd.
|
| APT50GF120JRD |
Fast IGBT & FRED 1200V 75A
The Fast IGBT is a new generation of high voltage power IGBTs.
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
|
ADPOW[Advanced Power Technology]
|
